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Everything about electronics
Everything about electronics
The SSM3K339R is a compact and efficient N-channel MOSFET designed by Toshiba. It is widely used in low-voltage switching applications where efficiency, small size, and fast switching are critical. Its low ON-resistance (RDS(on)) and high-speed switching capability make it an excellent choice for modern electronic circuits.
The SSM3K339R MOSFET is commonly used in:
Its ability to handle reasonable current and provide fast response makes it ideal for consumer electronics, embedded systems, and IoT devices.
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Parameter Value
Type N-channel MOSFET
Drain-Source Voltage (VDS) 30V
Continuous Drain Current (ID) ~6A (at VGS = 10V, Ta = 25°C)
Gate Threshold Voltage (VGS(th)) 1V – 2.5V
RDS(on) (typ.) 19 mΩ (at VGS = 10V) / 28 mΩ (at VGS = 4.5V)
Package SOT-23F
Power Dissipation (Pd) 2W (at Ta = 25°C)
Operating Temperature -55°C to +150°C
(Note: Always refer to the latest Toshiba datasheet for precise values.)
The SSM3K339R is a high-performance N-channel MOSFET designed for power switching, load driving, and efficient DC-DC conversion. With its low ON-resistance, fast switching, and small package size, it is highly suitable for portable electronics, IoT devices, and embedded applications.
If you are working on power-efficient designs or need a compact MOSFET solution, the SSM3K339R is an excellent choice.
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