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Everything about electronics
Everything about electronics
The STW48N60M2 is a high-performance N-channel, 600V, MDmesh™ M2 Power MOSFET from STMicroelectronics.
Designed for modern high-efficiency power conversion, this MOSFET delivers extremely low ON-resistance, fast switching, and superior avalanche capability—making it an excellent choice for SMPS, PFC stages, UPS, inverters, and motor drives.
This article explores the key features, benefits, working applications, and detailed specifications of the STW48N60M2 MOSFET.
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The STW48N60M2 is a 600V, 48A N-channel MOSFET built with MDmesh™ M2 technology, which offers:
It is housed in a TO-247 package, ideal for high-power designs.
Here are the standout features of this MOSFET:
Reduces conduction losses significantly, improving overall system efficiency.
Allows safe operation even in fault or transient conditions.
Suitable for high-frequency applications such as LLC, resonant converters, and PFC.
Helps reduce gate-drive power consumption and allows smaller gate drivers.
Low reverse recovery charge helps reduce switching losses in hard-switched topologies.
Provides excellent thermal conductivity and safe operation at higher currents.
Makes the device ideal for AC mains–connected power stages.
The STW48N60M2 MOSFET is widely used in the following domains:
Its high efficiency makes it suitable for server and telecom power supplies.
Ideal for Continuous Conduction Mode (CCM) and Interleaved PFC stages.
Used in high-voltage DC-AC conversion and MPPT stages.
Drives high-power inverter stages with excellent thermal stability.
Used in BLDC, AC induction motors, and servo driving systems.
High robustness ensures long-term operation in noisy and harsh environments.
Parameter Value
Type N-channel Power MOSFET
Technology MDmesh™ M2
Package TO-247
Drain-Source Voltage (VDS) 600 V
Continuous Drain Current (ID) 48 A @ 25°C
Pulsed Drain Current (ID,pulse) 192 A
Gate-Source Voltage (VGS) ±25 V
RDS(on) ~65 mΩ (typical)
Total Gate Charge (Qg) ~116 nC
Gate Threshold Voltage (VGS(th)) 3 – 4 V
Power Dissipation (Pd) 300 W
Operating Temperature -55°C to +150°C
Reverse Recovery Charge (Qrr) Very Low (Fast Body Diode)
(Values may slightly vary by datasheet revision—refer to the latest STMicroelectronics datasheet for exact numbers.)
If your design requires:
…then the STW48N60M2 is a top-tier MOSFET choice.
It is optimized for modern high-frequency power electronics where efficiency and ruggedness are critical.
The STW48N60M2 is a robust, efficient, and powerful 600V MOSFET ideal for SMPS, PFC, inverters, UPS systems, and motor drives. Thanks to ST’s MDmesh™ M2 technology, it delivers low losses, excellent switching performance, and superior thermal capability—all in a durable TO-247 package.
If you’re building a high-power converter, industrial power supply, or motor driver, the STW48N60M2 is a reliable and high-performance choice.