Physical Address
304 North Cardinal St.
Dorchester Center, MA 02124
SI2308 MOSFET — Features, Uses, and Complete Specifications
The SI2308 is a compact and efficient N-channel MOSFET widely used in low-voltage switching and power management circuits. Manufactured by Vishay Siliconix, this transistor offers a great balance between high voltage tolerance (60V) and low ON-resistance (RDS(on)), making it suitable for DC-DC converters, load switches, and motor drivers in compact electronics.
Overview
The SI2308 MOSFET is designed for fast switching, low conduction losses, and logic-level gate control. Its SOT-23 package makes it ideal for space-constrained PCB designs like portable devices, battery-powered systems, and embedded controllers.
Thanks to its low gate charge (Qg) and low RDS(on), it enables efficient operation even when driven directly from microcontroller GPIO pins.
For Video tutorial
⚙️ Key Features of SI2308
- Type: N-Channel Enhancement MOSFET
- High Drain-Source Voltage: Up to 60V
- Low ON-Resistance (RDS(on)): Reduces power losses and heating
- Logic-Level Gate Drive: Works with 3.3V and 5V control signals
- Fast Switching Speed: Suitable for PWM and high-frequency circuits
- Compact SOT-23 Package: Ideal for portable and miniature electronics
- High Efficiency: Excellent for low-voltage and high-current designs
(adsbygoogle = window.adsbygoogle || []).push({});
⚡ Common Applications of SI2308
The SI2308 is versatile and finds applications in a wide range of electronic projects and commercial designs.
1. DC-DC Converters
Used as a high-side or low-side switching MOSFET in buck and boost converters due to its efficiency and low gate charge.
2. Load Switching
Ideal for switching LED strips, relays, sensors, and logic-controlled power rails.
⚙️ 3. Motor Drivers
Employed in small DC motor and stepper motor control circuits.
️ 4. Embedded Systems
Used for GPIO-controlled power switching, especially in microcontroller and Arduino-based designs.
5. Battery-Powered Devices
Efficient performance makes it suitable for battery management and power-saving systems.
Technical Specifications of SI2308
Parameter Specification
Type N-Channel MOSFET
Drain-Source Voltage (VDS) 60V
Gate-Source Voltage (VGS) ±20V
Continuous Drain Current (ID) 2.1A (at Ta = 25°C)
Pulsed Drain Current (IDM) 10A (max)
RDS(on) 0.156Ω @ VGS = 10V0.192Ω @ VGS = 4.5V
Gate Threshold Voltage (Vth) 1.0V to 2.5V
Total Gate Charge (Qg) ~2.3nC
Power Dissipation (Pd) 1.25W (max at 25°C)
Package Type SOT-23
Operating Temperature Range -55°C to +150°C
(adsbygoogle = window.adsbygoogle || []).push({});
Note: Always check the latest Vishay datasheet for the most accurate and updated specifications.
Advantages of Using SI2308
- Compact and easy to integrate into modern PCB designs
- Low conduction losses ensure cooler operation
- Fast switching capability supports PWM-based designs
- Logic-level control allows direct interfacing with 3.3V/5V MCUs
- Reliable operation under a wide range of voltages and currents
(adsbygoogle = window.adsbygoogle || []).push({});
Summary
The SI2308 MOSFET is a power-efficient N-channel transistor ideal for low-voltage, high-frequency, and compact power applications. Its 60V voltage rating, low RDS(on), and logic-level control make it one of the most reliable choices for designers working on DC-DC converters, load drivers, and battery-operated devices.
If you’re designing compact and efficient circuits requiring fast switching and high reliability, the SI2308 is a dependable and cost-effective MOSFET solution.
About The Author
